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Vgs (th) (Max) @ Id: | 3.5V @ 310µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO262-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.8A, 10V |
Power Dissipation (Max): | 83W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andre navne: | IPI90R1K2C3 IPI90R1K2C3-ND SP000413724 SP000683080 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 6 Weeks |
Producentens varenummer: | IPI90R1K2C3XKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 710pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 900V 5.1A (Tc) 83W (Tc) Through Hole PG-TO262-3 |
Afløb til Source Voltage (VDSS): | 900V |
Beskrivelse: | MOSFET N-CH 900V 5.1A TO-262 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.1A (Tc) |
Email: | [email protected] |