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IPL60R299CP
- Varenummer:
- IPL60R299CP
- Beskrivelse:
- MOSFET N-CH 650V 11.1A 4VSON
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16843 Pieces
- Datablad:
- IPL60R299CP.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 440µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-VSON-4 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 299 mOhm @ 6.6A, 10V |
| Power Dissipation (Max): | 96W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 4-PowerTSFN |
| Andre navne: | IPL60R299CP-ND IPL60R299CPAUMA1 SP000841896 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | IPL60R299CP |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 11.1A (Tc) 96W (Tc) Surface Mount PG-VSON-4 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 11.1A 4VSON |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.1A (Tc) |
| Email: | [email protected] |
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