Købe IPP10N03LB G med BYCHPS
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| Vgs (th) (Max) @ Id: | 2V @ 20µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO220-3-1 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 9.9 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 58W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | IPP10N03LB G-ND IPP10N03LBGIN IPP10N03LBGX IPP10N03LBGXK SP000064222 SP000680860 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPP10N03LB G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1639pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 50A (Tc) 58W (Tc) Through Hole PG-TO220-3-1 |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 50A TO-220 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |