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Vgs (th) (Max) @ Id: | 4V @ 30µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15.7 mOhm @ 23A, 10V |
Power Dissipation (Max): | 65W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP45N06S3-16-ND IPP45N06S3-16IN IPP45N06S316X IPP45N06S316XK SP000102218 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPP45N06S3-16 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2980pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 55V 45A (Tc) 65W (Tc) Through Hole PG-TO220-3-1 |
Afløb til Source Voltage (VDSS): | 55V |
Beskrivelse: | MOSFET N-CH 55V 45A TO-220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 45A (Tc) |
Email: | [email protected] |