Købe IPP47N10S33AKSA1 med BYCHPS
Køb med garanti
| Vgs (th) (Max) @ Id: | 4V @ 2mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO220-3-1 |
| Serie: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 33A, 10V |
| Power Dissipation (Max): | 175W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | IPP47N10S-33 IPP47N10S-33-ND IPP47N10S33 SP000225706 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPP47N10S33AKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 47A TO220-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 47A (Tc) |
| Email: | [email protected] |