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Vgs (th) (Max) @ Id: | 3.5V @ 200µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 2.3A, 13V |
Power Dissipation (Max): | - |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP50R500CEIN IPP50R500CEXKSA1 SP000939326 |
Driftstemperatur: | - |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | IPP50R500CE |
Inputkapacitans (Ciss) (Max) @ Vds: | 433pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 18.7nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | Super Junction |
Udvidet beskrivelse: | N-Channel 500V 7.6A (Tc) Through Hole PG-TO220-3-1 |
Drevspænding (Maks. Rds On, Min Rds On): | 13V |
Afløb til Source Voltage (VDSS): | 500V |
Beskrivelse: | MOSFET N-CH 500V 7.6A PG-TO220 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.6A (Tc) |
Email: | [email protected] |