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Vgs (th) (Max) @ Id: | 3.5V @ 660µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO-220-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 199 mOhm @ 9.9A, 10V |
Power Dissipation (Max): | 139W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 |
Andre navne: | IPP60R199CP IPP60R199CP-ND IPP60R199CPAKSA1 IPP60R199CPIN IPP60R199CPIN-ND IPP60R199CPX IPP60R199CPXK SP000084278 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | IPP60R199CPXKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1520pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 16A (Tc) 139W (Tc) Through Hole PG-TO-220-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 16A TO220-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 16A (Tc) |
Email: | [email protected] |