Købe IPU135N08N3 G med BYCHPS
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Vgs (th) (Max) @ Id: | 3.5V @ 33µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO251-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 50A, 10V |
Power Dissipation (Max): | 79W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Andre navne: | IPU135N08N3G IPU135N08N3GBKMA1 SP000521642 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPU135N08N3 G |
Inputkapacitans (Ciss) (Max) @ Vds: | 1730pF @ 40V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 80V 50A (Tc) 79W (Tc) Through Hole PG-TO251-3 |
Afløb til Source Voltage (VDSS): | 80V |
Beskrivelse: | MOSFET N-CH 80V 50A TO251-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
Email: | [email protected] |