Købe IPU60R1K4C6BKMA1 med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 3.5V @ 90µA |
---|---|
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO251 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.1A, 10V |
Power Dissipation (Max): | 28.4W (Tc) |
Emballage: | Bulk |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | -55°C ~ 155°C (TJ) |
Monteringstype: | Through Hole |
Producentens varenummer: | IPU60R1K4C6BKMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | Super Junction |
Udvidet beskrivelse: | N-Channel 600V 3.2A (Tc) 28.4W (Tc) Through Hole PG-TO251 |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET NCH 600V 3.2A TO251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.2A (Tc) |
Email: | [email protected] |