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IPU80R2K8CEBKMA1
- Varenummer:
- IPU80R2K8CEBKMA1
- Beskrivelse:
- MOSFET N-CH 800V 1.9A TO251-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18365 Pieces
- Datablad:
- IPU80R2K8CEBKMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.9V @ 120µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO251-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 1.1A, 10V |
| Power Dissipation (Max): | 42W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Andre navne: | SP001100622 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPU80R2K8CEBKMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 290pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3 |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 1.9A TO251-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.9A (Tc) |
| Email: | [email protected] |
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