Købe IPW65R190CFDAFKSA1 med BYCHPS
Køb med garanti
IPW65R190CFDAFKSA1
- Varenummer:
- IPW65R190CFDAFKSA1
- Beskrivelse:
- MOSFET N-CH 650V 17.5A TO247
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13319 Pieces
- Datablad:
- IPW65R190CFDAFKSA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPW65R190CFDAFKSA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPW65R190CFDAFKSA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 700µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO247-3 |
| Serie: | Automotive, AEC-Q101, CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7.3A, 10V |
| Power Dissipation (Max): | 151W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | SP000928268 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | IPW65R190CFDAFKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1850pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO247-3 |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 17.5A TO247 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 17.5A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPW65R190CFDAFKSA1
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPW65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | Forespørgsel |
|
IPW65R190CFD | Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | Forespørgsel |
|
IPW65R420CFDFKSA1 | Infineon Technologies | MOSFET N-CH 650V 8.7A TO247 | Forespørgsel |
|
IPW65R190E6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | Forespørgsel |
|
IPW65R150CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Forespørgsel |
|
IPW65R150CFDFKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Forespørgsel |
|
IPW65R041CFD | Infineon Technologies | MOSFET N CH 650V 68.5A PG-TO247 | Forespørgsel |
|
IPW65R125C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO247 | Forespørgsel |
|
IPW65R190C6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | Forespørgsel |
|
IPW65R110CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | Forespørgsel |
|
IPW65R190C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.2A TO247 | Forespørgsel |
|
IPW65R099C6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO-247 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog