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IRF200B211
- Varenummer:
- IRF200B211
- Beskrivelse:
- MOSFET N-CH 200V 12A TO-220AB
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15219 Pieces
- Datablad:
- IRF200B211.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IRF200B211, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IRF200B211 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4.9V @ 50µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220AB |
| Serie: | HEXFET®, StrongIRFET™ |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 7.2A, 10V |
| Power Dissipation (Max): | 80W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | SP001561622 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | IRF200B211 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 790pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 12A TO-220AB |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
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