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Vgs (th) (Max) @ Id: | 2.25V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ ST |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 12.7A, 10V |
Power Dissipation (Max): | 2.1W (Ta), 42W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | DirectFET™ Isometric ST |
Andre navne: | IRF6614TR1PBF-ND IRF6614TR1PBFTR SP001524574 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IRF6614TR1PBF |
Inputkapacitans (Ciss) (Max) @ Vds: | 2560pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 12.7A DIRECTFET |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12.7A (Ta), 55A (Tc) |
Email: | [email protected] |