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IRF6691TR1
- Varenummer:
- IRF6691TR1
- Beskrivelse:
- MOSFET N-CH 20V 32A DIRECTFET
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 15387 Pieces
- Datablad:
- IRF6691TR1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DIRECTFET™ MT |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | DirectFET™ Isometric MT |
| Andre navne: | SP001530888 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Producentens varenummer: | IRF6691TR1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 6580pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 20V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 32A DIRECTFET |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Ta), 180A (Tc) |
| Email: | [email protected] |
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