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Vgs (th) (Max) @ Id: | 2.35V @ 100µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ MX |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 32A, 10V |
Power Dissipation (Max): | 2.8W (Ta), 100W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | DirectFET™ Isometric MX |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
Producentens varenummer: | IRF6794MTRPBF |
Inputkapacitans (Ciss) (Max) @ Vds: | 4420pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | Schottky Diode (Body) |
Udvidet beskrivelse: | N-Channel 25V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX |
Afløb til Source Voltage (VDSS): | 25V |
Beskrivelse: | MOSFET N-CH 25V DIRECTFET MX |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Ta), 200A (Tc) |
Email: | [email protected] |