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IRFB9N65A
- Varenummer:
- IRFB9N65A
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 650V 8.5A TO-220AB
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 18310 Pieces
- Datablad:
- 1.IRFB9N65A.pdf2.IRFB9N65A.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IRFB9N65A, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IRFB9N65A via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220AB |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 930 mOhm @ 5.1A, 10V |
| Power Dissipation (Max): | 167W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | *IRFB9N65A |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IRFB9N65A |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1417pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 8.5A TO-220AB |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8.5A (Tc) |
| Email: | [email protected] |
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