Købe IRFBE30S med BYCHPS
Køb med garanti
IRFBE30S
- Varenummer:
- IRFBE30S
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 800V 4.1A D2PAK
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 17574 Pieces
- Datablad:
- IRFBE30S.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IRFBE30S, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IRFBE30S via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D2PAK |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2.5A, 10V |
| Power Dissipation (Max): | 125W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | *IRFBE30S |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IRFBE30S |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D2PAK |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 4.1A D2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.1A (Tc) |
| Email: | [email protected] |
Relaterede dele til IRFBE30S
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IRFBE30SPBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | Forespørgsel |
|
IRFBE30STRLPBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | Forespørgsel |
 |
IRFBE30PBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-220AB | Forespørgsel |
|
IRFBE30STRL | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | Forespørgsel |
 |
IRFBE30LPBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-262 | Forespørgsel |
|
IRFBE20S | Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | Forespørgsel |
|
IRFBE30 | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-220AB | Forespørgsel |
|
IRFBE30STRR | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | Forespørgsel |
 |
IRFBE30L | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-262 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog