Købe IRFN214BTA_FP001 med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-92-3 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 300mA, 10V |
Power Dissipation (Max): | 1.8W (Ta) |
Emballage: | Tape & Box (TB) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IRFN214BTA_FP001 |
Inputkapacitans (Ciss) (Max) @ Vds: | 275pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 250V 600mA (Ta) 1.8W (Ta) Through Hole TO-92-3 |
Afløb til Source Voltage (VDSS): | 250V |
Beskrivelse: | MOSFET N-CH 250V 0.6A TO-92 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 600mA (Ta) |
Email: | [email protected] |