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IRFSL59N10D
- Varenummer:
- IRFSL59N10D
- Beskrivelse:
- MOSFET N-CH 100V 59A TO-262
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 18691 Pieces
- Datablad:
- IRFSL59N10D.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-262 |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 35.4A, 10V |
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navne: | *IRFSL59N10D |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IRFSL59N10D |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2450pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 59A TO-262 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 59A (Tc) |
| Email: | [email protected] |
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