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Vgs (th) (Max) @ Id: | 4V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | IPAK (TO-251) |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 5.2A, 10V |
Power Dissipation (Max): | 35W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Andre navne: | *IRFU120ZPBF SP001578408 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IRFU120ZPBF |
Inputkapacitans (Ciss) (Max) @ Vds: | 310pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 8.7A (Tc) 35W (Tc) Through Hole IPAK (TO-251) |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V 8.7A I-PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8.7A (Tc) |
Email: | [email protected] |