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Vgs (th) (Max) @ Id: | 4V @ 1mA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-263-7 (IXTA..7) |
Serie: | GigaMOS™, HiPerFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
Power Dissipation (Max): | 480W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 8 Weeks |
Producentens varenummer: | IXFA230N075T2-7 |
Inputkapacitans (Ciss) (Max) @ Vds: | 10500pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 75V 230A (Tc) 480W (Tc) Surface Mount TO-263-7 (IXTA..7) |
Afløb til Source Voltage (VDSS): | 75V |
Beskrivelse: | MOSFET N-CH 75V 230A TO-263-7 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 230A (Tc) |
Email: | [email protected] |