Købe IXTT110N10L2 med BYCHPS
Køb med garanti
| Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-268 |
| Serie: | Linear L2™ |
| Rds On (Max) @ Id, Vgs: | 18 mOhm @ 55A, 10V |
| Power Dissipation (Max): | 600W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Producentens varenummer: | IXTT110N10L2 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 10500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 110A (Tc) 600W (Tc) Surface Mount TO-268 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 110A TO-268 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 110A (Tc) |
| Email: | [email protected] |