Købe IXTU01N100D med BYCHPS
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Vgs (th) (Max) @ Id: | 5V @ 25µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-251 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 80 Ohm @ 50mA, 0V |
Power Dissipation (Max): | 1.1W (Ta), 25W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 10 Weeks |
Producentens varenummer: | IXTU01N100D |
Inputkapacitans (Ciss) (Max) @ Vds: | 120pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | - |
FET Type: | N-Channel |
FET-funktion: | Depletion Mode |
Udvidet beskrivelse: | N-Channel 1000V (1kV) 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251 |
Afløb til Source Voltage (VDSS): | 1000V (1kV) |
Beskrivelse: | MOSFET N-CH 1000V 0.1A TO-251 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 100mA (Tc) |
Email: | [email protected] |