Købe JANTXV1N5415US med BYCHPS
Køb med garanti
JANTXV1N5415US
- Varenummer:
- JANTXV1N5415US
- Fabrikant:
- Microsemi
- Beskrivelse:
- DIODE GEN PURP 50V 3A D5B
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 17968 Pieces
- Datablad:
- JANTXV1N5415US.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for JANTXV1N5415US, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til JANTXV1N5415US via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Videresend (Vf) (Max) @ Hvis: | 1.5V @ 9A |
|---|---|
| Spænding - DC-omvendt (Vr) (Max): | 50V |
| Leverandør Device Package: | D-5B |
| Fart: | Fast Recovery = 200mA (Io) |
| Serie: | Military, MIL-PRF-19500/411 |
| Reverse Recovery Time (trr): | 150ns |
| Emballage: | Bulk |
| Pakke / tilfælde: | SQ-MELF, B |
| Andre navne: | 1086-2807 1086-2807-MIL |
| Driftstemperatur - Junction: | -65°C ~ 175°C |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | JANTXV1N5415US |
| Udvidet beskrivelse: | Diode Standard 50V 3A Surface Mount D-5B |
| Diodetype: | Standard |
| Beskrivelse: | DIODE GEN PURP 50V 3A D5B |
| Nuværende - Reverse Lækage @ Vr: | 1µA @ 50V |
| Nuværende - Gennemsnitlig Rectified (Io): | 3A |
| Kapacitans @ Vr, F: | - |
| Email: | [email protected] |
Relaterede dele til JANTXV1N5415US
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
JANTXV1N5419US | Microsemi Corporation | DIODE GEN PURP 500V 3A B-MELF | Forespørgsel |
 |
JANTXV1N5417 | Microsemi Corporation | DIODE GEN PURP 200V 3A AXIAL | Forespørgsel |
|
JANTXV1N5416US | Microsemi Corporation | DIODE GEN PURP 100V 3A D5B | Forespørgsel |
|
JANTXV1N5420US | Microsemi Corporation | DIODE GEN PURP 600V 3A D5B | Forespørgsel |
|
JANTXV1N5417US | Microsemi Corporation | DIODE GEN PURP 200V 3A D5B | Forespørgsel |
|
JANTXV1N5415 | Microsemi Corporation | DIODE GEN PURP 50V 3A AXIAL | Forespørgsel |
|
JANTXV1N5419 | Microsemi Corporation | DIODE GEN PURP 500V 3A AXIAL | Forespørgsel |
|
JANTXV1N5418US | Microsemi Corporation | DIODE GEN PURP 400V 3A D5B | Forespørgsel |
 |
JANTXV1N5418 | Microsemi Corporation | DIODE GEN PURP 400V 3A AXIAL | Forespørgsel |
 |
JANTXV1N5420 | Microsemi Corporation | DIODE GEN PURP 600V 3A AXIAL | Forespørgsel |
 |
JANTXV1N5416 | Microsemi Corporation | DIODE GEN PURP 100V 3A AXIAL | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog