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MMUN2212LT1G
- Varenummer:
- MMUN2212LT1G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN 246MW SOT23-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12239 Pieces
- Datablad:
- MMUN2212LT1G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for MMUN2212LT1G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til MMUN2212LT1G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Device Package: | SOT-23-3 (TO-236) |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 22k |
| Modstand - Base (R1) (Ohms): | 22k |
| Strøm - Max: | 246mW |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-236-3, SC-59, SOT-23-3 |
| Andre navne: | MMUN2212LT1GOS MMUN2212LT1GOS-ND MMUN2212LT1GOSTR |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | MMUN2212LT1G |
| Frekvens - Overgang: | - |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
| Beskrivelse: | TRANS PREBIAS NPN 246MW SOT23-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
| Nuværende - Collector Cutoff (Max): | 500nA |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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