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MUN5312DW1T1G
- Varenummer:
- MUN5312DW1T1G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN/PNP SOT363
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13946 Pieces
- Datablad:
- MUN5312DW1T1G.pdf
Introduktion
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specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Leverandør Device Package: | SC-88/SC70-6/SOT-363 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 22k |
| Modstand - Base (R1) (Ohms): | 22k |
| Strøm - Max: | 250mW |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | 6-TSSOP, SC-88, SOT-363 |
| Andre navne: | MUN5312DW1T1GOSDKR |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 4 Weeks |
| Producentens varenummer: | MUN5312DW1T1G |
| Frekvens - Overgang: | - |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 |
| Beskrivelse: | TRANS PREBIAS NPN/PNP SOT363 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
| Nuværende - Collector Cutoff (Max): | 500nA |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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