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NDD03N80Z-1G
- Varenummer:
- NDD03N80Z-1G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V 2.9A IPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13163 Pieces
- Datablad:
- NDD03N80Z-1G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4.5V @ 50µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I-Pak |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 1.2A, 10V |
| Power Dissipation (Max): | 96W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | NDD03N80Z-1G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 2.9A (Tc) 96W (Tc) Through Hole I-Pak |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 2.9A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.9A (Tc) |
| Email: | [email protected] |
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