Købe NE3511S02-A med BYCHPS
Køb med garanti
NE3511S02-A
- Varenummer:
- NE3511S02-A
- Fabrikant:
- CEL (California Eastern Laboratories)
- Beskrivelse:
- HJ-FET NCH 13.5DB S02
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14173 Pieces
- Datablad:
- 1.NE3511S02-A.pdf2.NE3511S02-A.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for NE3511S02-A, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til NE3511S02-A via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Test: | 2V |
|---|---|
| Spændingsvurdering: | 4V |
| Transistor Type: | HFET |
| Leverandør Device Package: | S02 |
| Serie: | - |
| Power - Output: | - |
| Emballage: | Bulk |
| Pakke / tilfælde: | 4-SMD, Flat Leads |
| Andre navne: | NE3511S02A |
| Støj figur: | 0.3dB |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NE3511S02-A |
| Gevinst: | 13.5dB |
| Frekvens: | 12GHz |
| Udvidet beskrivelse: | RF Mosfet HFET 2V 10mA 12GHz 13.5dB S02 |
| Beskrivelse: | HJ-FET NCH 13.5DB S02 |
| Nuværende vurdering: | 70mA |
| Nuværende - Test: | 10mA |
| Email: | [email protected] |
Relaterede dele til NE3511S02-A
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
NE3513M04-T2B-A | CEL | FET RF 4V 12GHZ M04 4SMD | Forespørgsel |
 |
NE3512S02-T1C-A | CEL | HJ-FET NCH 13.5DB S02 | Forespørgsel |
|
NE3511S02-T1C-A | CEL | IC AMP RF LNA 13.5DB S02 | Forespørgsel |
|
NE3512S02-A | CEL | HJ-FET NCH 13.5DB S02 | Forespørgsel |
|
NE3516S02-T1C-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Forespørgsel |
 |
NE3513M04-A | CEL | FET RF 4V 12GHZ M04 4SMD | Forespørgsel |
|
NE3510M04-T2-A | CEL | FET RF 4V 4GHZ M04 | Forespørgsel |
|
NE3514S02-A | CEL | HJ-FET NCH 10DB S02 | Forespørgsel |
 |
BLC9G20XS-550AVT | Ampleon USA Inc. | RF FET LDMOS 65V 15.4DB SOT12587 | Forespørgsel |
|
NE3514S02-T1C-A | CEL | HJ-FET NCH 10DB S02 | Forespørgsel |
|
NE3513M04-T2-A | CEL | FET RF 4V 12GHZ M04 4SMD | Forespørgsel |
|
NE3515S02-T1D-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Forespørgsel |
|
NE3515S02-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Forespørgsel |
|
NE3517S03-T1C-A | CEL | FET RF 4V 20GHZ S03 | Forespørgsel |
|
NE3510M04-A | CEL | FET RF 4V 4GHZ M04 | Forespørgsel |
|
NE3515S02-T1C-A | CEL | FET RF HFET 12GHZ 2V 10MA S02 | Forespørgsel |
|
NE3516S02-A | CEL | IC HJ-FET RF N-CH S02 4-MICROX | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog