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NJVNJD35N04G
- Varenummer:
- NJVNJD35N04G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- TRANS NPN DARL 350V 4A DPAK-4
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17417 Pieces
- Datablad:
- NJVNJD35N04G.pdf
Introduktion
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specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 350V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 1.5V @ 20mA, 2A |
| Transistor Type: | NPN - Darlington |
| Leverandør Device Package: | DPAK-3 |
| Serie: | - |
| Strøm - Max: | 45W |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Driftstemperatur: | -65°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 2 Weeks |
| Producentens varenummer: | NJVNJD35N04G |
| Frekvens - Overgang: | 90MHz |
| Udvidet beskrivelse: | Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK-3 |
| Beskrivelse: | TRANS NPN DARL 350V 4A DPAK-4 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 2A, 2V |
| Nuværende - Collector Cutoff (Max): | 50µA |
| Nuværende - Samler (Ic) (Max): | 4A |
| Email: | [email protected] |
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