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NP80N055NDG-S18-AY
- Varenummer:
- NP80N055NDG-S18-AY
- Fabrikant:
- Renesas Electronics America
- Beskrivelse:
- MOSFET N-CH 55V 80A TO-262
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17744 Pieces
- Datablad:
- NP80N055NDG-S18-AY.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for NP80N055NDG-S18-AY, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til NP80N055NDG-S18-AY via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-262 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 6.9 mOhm @ 40A, 10V |
| Power Dissipation (Max): | 1.8W (Ta), 115W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | NP80N055NDG-S18-AY |
| Inputkapacitans (Ciss) (Max) @ Vds: | 6900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 55V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-262 |
| Afløb til Source Voltage (VDSS): | 55V |
| Beskrivelse: | MOSFET N-CH 55V 80A TO-262 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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