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Vgs (th) (Max) @ Id: | 4V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-262 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 41A, 10V |
Power Dissipation (Max): | 1.8W (Ta), 143W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Driftstemperatur: | 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | NP82N04NUG-S18-AY |
Inputkapacitans (Ciss) (Max) @ Vds: | 9750pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-262 |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 82A TO-262 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 82A (Tc) |
Email: | [email protected] |