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NTB25P06G
- Varenummer:
- NTB25P06G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET P-CH 60V 27.5A D2PAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18023 Pieces
- Datablad:
- NTB25P06G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D2PAK |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 25A, 10V |
| Power Dissipation (Max): | 120W (Tj) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NTB25P06G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1680pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET P-CH 60V 27.5A D2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 27.5A (Ta) |
| Email: | [email protected] |
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