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NVD4809NT4G
- Varenummer:
- NVD4809NT4G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 30V 58A DPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19483 Pieces
- Datablad:
- NVD4809NT4G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | DPAK |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 1.4W (Ta), 52W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | NVD4809NT4G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1456pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 11.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 58A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.6A (Ta), 58A (Tc) |
| Email: | [email protected] |
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