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PDTD123YS,126
- Varenummer:
- PDTD123YS,126
- Fabrikant:
- NXP Semiconductors / Freescale
- Beskrivelse:
- TRANS PREBIAS NPN 500MW TO92-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15430 Pieces
- Datablad:
- PDTD123YS,126.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for PDTD123YS,126, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til PDTD123YS,126 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Device Package: | TO-92-3 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 10k |
| Modstand - Base (R1) (Ohms): | 2.2k |
| Strøm - Max: | 500mW |
| Emballage: | Tape & Box (TB) |
| Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andre navne: | 934059147126 PDTD123YS AMO PDTD123YS AMO-ND |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | PDTD123YS,126 |
| Frekvens - Overgang: | - |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3 |
| Beskrivelse: | TRANS PREBIAS NPN 500MW TO92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
| Nuværende - Collector Cutoff (Max): | 500nA |
| Nuværende - Samler (Ic) (Max): | 500mA |
| Email: | [email protected] |
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