Købe PHM25NQ10T,518 med BYCHPS
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Vgs (th) (Max) @ Id: | 4V @ 1mA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-HVSON (6x5) |
Serie: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 10A, 10V |
Power Dissipation (Max): | 62.5W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-VDFN Exposed Pad |
Andre navne: | 934057309518 PHM25NQ10T /T3 PHM25NQ10T /T3-ND |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | PHM25NQ10T,518 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1800pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 26.6nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 30.7A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5) |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V 30.7A 8HVSON |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 30.7A (Tc) |
Email: | [email protected] |