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Vgs (th) (Max) @ Id: | 4V @ 1mA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | SOT-223 |
Serie: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1.75A, 10V |
Power Dissipation (Max): | 6.9W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-261-4, TO-261AA |
Andre navne: | 1727-5337-2 568-6777-2 568-6777-2-ND 934056117135 PHT4NQ10T /T3 PHT4NQ10T /T3-ND PHT4NQ10T,135-ND PHT4NQ10T135 |
Driftstemperatur: | -65°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 20 Weeks |
Producentens varenummer: | PHT4NQ10T,135 |
Inputkapacitans (Ciss) (Max) @ Vds: | 300pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 3.5A (Tc) 6.9W (Tc) Surface Mount SOT-223 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V 3.5A SOT223 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.5A (Tc) |
Email: | [email protected] |