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R6009ENJTL
- Varenummer:
- R6009ENJTL
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 600V 9A LPT
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16566 Pieces
- Datablad:
- R6009ENJTL.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | LPTS (D2PAK) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 535 mOhm @ 2.8A, 10V |
| Power Dissipation (Max): | 40W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | R6009ENJTLDKR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 17 Weeks |
| Producentens varenummer: | R6009ENJTL |
| Inputkapacitans (Ciss) (Max) @ Vds: | 430pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK) |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 9A LPT |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9A (Tc) |
| Email: | [email protected] |
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