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RCD100N19TL
- Varenummer:
- RCD100N19TL
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 190V 10A CPT3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18408 Pieces
- Datablad:
- RCD100N19TL.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for RCD100N19TL, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til RCD100N19TL via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | CPT3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 182 mOhm @ 5A, 10V |
| Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | RCD100N19TLTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 17 Weeks |
| Producentens varenummer: | RCD100N19TL |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 4V, 10V |
| Afløb til Source Voltage (VDSS): | 190V |
| Beskrivelse: | MOSFET N-CH 190V 10A CPT3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10A (Tc) |
| Email: | [email protected] |
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