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| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Vgs (Max): | ±16V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-252AA |
| Serie: | UltraFET™ |
| Rds On (Max) @ Id, Vgs: | 63 mOhm @ 18A, 10V |
| Power Dissipation (Max): | 49W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | RFD12N06RLESM9A-ND RFD12N06RLESM9ATR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | RFD12N06RLESM9A |
| Inputkapacitans (Ciss) (Max) @ Vds: | 485pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA |
| Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 18A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 18A (Tc) |
| Email: | [email protected] |