Købe RN1131MFV(TL3,T) med BYCHPS
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RN1131MFV(TL3,T)
- Varenummer:
- RN1131MFV(TL3,T)
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN 0.15W VESM
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17878 Pieces
- Datablad:
- RN1131MFV(TL3,T).pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for RN1131MFV(TL3,T), vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til RN1131MFV(TL3,T) via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Device Package: | VESM |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | - |
| Modstand - Base (R1) (Ohms): | 100k |
| Strøm - Max: | 150mW |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | SOT-723 |
| Andre navne: | RN1131MFV(TL3T)CT |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | RN1131MFV(TL3,T) |
| Frekvens - Overgang: | - |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| Beskrivelse: | TRANS PREBIAS NPN 0.15W VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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