Købe RN2706JE(TE85L,F) med BYCHPS
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RN2706JE(TE85L,F)
- Varenummer:
- RN2706JE(TE85L,F)
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- TRANS 2PNP PREBIAS 0.1W ESV
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15251 Pieces
- Datablad:
- RN2706JE(TE85L,F).pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for RN2706JE(TE85L,F), vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til RN2706JE(TE85L,F) via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Leverandør Device Package: | ESV |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 47k |
| Modstand - Base (R1) (Ohms): | 4.7k |
| Strøm - Max: | 100mW |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | SOT-553 |
| Andre navne: | RN2706JE(TE85LF)CT |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | RN2706JE(TE85L,F) |
| Frekvens - Overgang: | 200MHz |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV |
| Beskrivelse: | TRANS 2PNP PREBIAS 0.1W ESV |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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