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RS1E200GNTB
- Varenummer:
- RS1E200GNTB
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- MOSFET N-CH 30V 20A 8-HSOP
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13598 Pieces
- Datablad:
- RS1E200GNTB.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for RS1E200GNTB, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til RS1E200GNTB via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-HSOP |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 3W (Ta), 25.1W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerTDFN |
| Andre navne: | RS1E200GNTBTR |
| Driftstemperatur: | 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | RS1E200GNTB |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1080pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface Mount 8-HSOP |
| Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 20A 8-HSOP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A (Ta) |
| Email: | [email protected] |
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