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SCT10N120
- Varenummer:
- SCT10N120
- Fabrikant:
- ST
- Beskrivelse:
- MOSFET N-CH 1.2KV TO247-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16512 Pieces
- Datablad:
- 1.SCT10N120.pdf2.SCT10N120.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SCT10N120, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SCT10N120 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 250µA |
|---|---|
| Vgs (Max): | +25V, -10V |
| Teknologi: | SiCFET (Silicon Carbide) |
| Leverandør Device Package: | HiP247™ |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 690 mOhm @ 6A, 20V |
| Power Dissipation (Max): | 150W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | 497-16597-5 |
| Driftstemperatur: | -55°C ~ 200°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SCT10N120 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 290pF @ 400V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 20V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 1200V (1.2kV) 12A (Tc) 150W (Tc) Through Hole HiP247™ |
| Drevspænding (Maks. Rds On, Min Rds On): | 20V |
| Afløb til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | MOSFET N-CH 1.2KV TO247-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
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