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SI2312BDS-T1-GE3
- Varenummer:
- SI2312BDS-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 20V 3.9A SOT23-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16168 Pieces
- Datablad:
- SI2312BDS-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI2312BDS-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI2312BDS-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 850mV @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | SOT-23-3 (TO-236) |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5A, 4.5V |
| Power Dissipation (Max): | 750mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-236-3, SC-59, SOT-23-3 |
| Andre navne: | SI2312BDS-T1-GE3TR SI2312BDST1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | SI2312BDS-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Drevspænding (Maks. Rds On, Min Rds On): | 1.8V, 4.5V |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 3.9A SOT23-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.9A (Ta) |
| Email: | [email protected] |
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