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SI3900DV-T1-GE3
- Varenummer:
- SI3900DV-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET 2N-CH 20V 2A 6-TSOP
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13921 Pieces
- Datablad:
- SI3900DV-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI3900DV-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI3900DV-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
|---|---|
| Leverandør Device Package: | 6-TSOP |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.4A, 4.5V |
| Strøm - Max: | 830mW |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | SOT-23-6 Thin, TSOT-23-6 |
| Andre navne: | SI3900DV-T1-GE3TR SI3900DVT1GE3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Producentens varenummer: | SI3900DV-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET 2N-CH 20V 2A 6-TSOP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A |
| Email: | [email protected] |
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