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SI4190DY-T1-GE3
- Varenummer:
- SI4190DY-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N-CH 100V 20A 8-SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16632 Pieces
- Datablad:
- SI4190DY-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI4190DY-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI4190DY-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.8V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 15A, 10V |
| Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI4190DY-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SI4190DY-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2000pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 20A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 20A 8-SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A (Tc) |
| Email: | [email protected] |
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