Købe SI4322DY-T1-GE3 med BYCHPS
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Vgs (th) (Max) @ Id: | 3V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 10V |
Power Dissipation (Max): | 3.1W (Ta), 5.4W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SI4322DY-T1-GE3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1640pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 30V 18A (Tc) 3.1W (Ta), 5.4W (Tc) Surface Mount 8-SO |
Afløb til Source Voltage (VDSS): | 30V |
Beskrivelse: | MOSFET N-CH 30V 18A 8-SOIC |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 18A (Tc) |
Email: | [email protected] |