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SI4410DYPBF
- Varenummer:
- SI4410DYPBF
- Beskrivelse:
- MOSFET N-CH 30V 10A 8-SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19232 Pieces
- Datablad:
- SI4410DYPBF.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 8-SO |
| Serie: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 10A, 10V |
| Power Dissipation (Max): | 2.5W (Ta) |
| Emballage: | Tube |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | 62-0231PBF 62-0231PBF-ND SP001563080 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SI4410DYPBF |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1585pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 10A 8-SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10A (Ta) |
| Email: | [email protected] |
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