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SI4500BDY-T1-GE3
- Varenummer:
- SI4500BDY-T1-GE3
- Fabrikant:
- Vishay / Siliconix
- Beskrivelse:
- MOSFET N/P-CH 20V 6.6A 8-SOIC
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17055 Pieces
- Datablad:
- SI4500BDY-T1-GE3.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for SI4500BDY-T1-GE3, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til SI4500BDY-T1-GE3 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
|---|---|
| Leverandør Device Package: | 8-SO |
| Serie: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9.1A, 4.5V |
| Strøm - Max: | 1.3W |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI4500BDY-T1-GE3DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | SI4500BDY-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| FET Type: | N and P-Channel, Common Drain |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array N and P-Channel, Common Drain 20V 6.6A, 3.8A 1.3W Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N/P-CH 20V 6.6A 8-SOIC |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6.6A, 3.8A |
| Email: | [email protected] |
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