Købe SI4829DY-T1-E3 med BYCHPS
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Vgs (th) (Max) @ Id: | 1.5V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-SO |
Serie: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 215 mOhm @ 2.5A, 4.5V |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | SI4829DY-T1-E3 |
Inputkapacitans (Ciss) (Max) @ Vds: | 210pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | Schottky Diode (Isolated) |
Udvidet beskrivelse: | P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO |
Afløb til Source Voltage (VDSS): | 20V |
Beskrivelse: | MOSFET P-CH 20V 2A 8-SOIC |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2A (Tc) |
Email: | [email protected] |